Properties of Lattice-Matched and Strained Indium Gallium Arsenide Pallab Bhattacharya

ISBN: 9780852968659

Published: October 1st 1993

Hardcover

340 pages


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Properties of Lattice-Matched and Strained Indium Gallium Arsenide  by  Pallab Bhattacharya

Properties of Lattice-Matched and Strained Indium Gallium Arsenide by Pallab Bhattacharya
October 1st 1993 | Hardcover | PDF, EPUB, FB2, DjVu, audiobook, mp3, RTF | 340 pages | ISBN: 9780852968659 | 10.22 Mb

The semiconductor InGaAs (indium gallium arsenide) plays a pivotal role in the study of quantum systems which provide promising applications in the fields of microelectronics and optoelectronics. This reference explores recent developments withMoreThe semiconductor InGaAs (indium gallium arsenide) plays a pivotal role in the study of quantum systems which provide promising applications in the fields of microelectronics and optoelectronics.

This reference explores recent developments with InGaAs. Leading researchers from the USA, Europe and Japan cover such issues as structural, thermal, mechanical and vibrational properties, the band structure of lattice-matched and strained alloys, transport and surface properties, radiative and non-radiative recombinations, expitaxial growth, doping, etching of InGaAs and related heterostructures, photodetectors, FETs, double heterostructure and quantum well lasers.



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